advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -40v simple drive requirement r ds(on) 65m fast switching characteristic i d -13.6a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance junction-case 6.0 /w rthj-a maximum thermal resistance junction-ambient 110 /w data and specifications subject to change without notice -55 to 150 20.8 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v thermal data parameter total power dissipation operating junction temperature range storage temperature range continuous drain current, v gs @ 10v -8.6 pulsed drain current 1 -50 200806161 1 AP9566GH rating -40 + 20 -13.6 rohs-compliant product g d s g d s to-252(h) the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
AP9566GH electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-10a - - 65 m ? ?
AP9566GH fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c - 10 v - 7.0 v - 6.0 v - 5.0 v v gs =-4.0v 0 10 20 30 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -6.0v -5.0v v gs = -4.0 v t c = 150 o c 50 60 70 80 90 246810 -v gs , gate-to-source voltage (v) r ds(on) (m
AP9566GH fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0 4 8 12 16 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -32v i d = -6a 0 200 400 600 800 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9566gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement 5
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